瑞典Obducat 30Kv TFE， 50Kv TFE電子束刻蝕系統
1998年Obducat公司并購了在SEM有三十年經驗的Camscan，并結合自身在納米壓印設備以及光存儲設備的開發經驗，研發了電子束刻蝕設備，提供EBR-30kV,EBR-50kV兩種不同型號，都配備熱場發射電子腔。 技術參數Electron gun /
Filament type
Thermal Field Emission (ZrO/C) X/Y Tilt/Shift Magnetic Alignment
Cathode life
Typically 10,000 hrs+
Beam spot size
Down to 8 nm 30 kV, Down to 2nm 50kV
Beam current density
Typically > 1000 A/cm2
Acceleration voltage
30 kV or 50kV
Gun EHT unit
EHT unit includes Suppressor, Extractor, Lens and Filament supplies
Condenser lenses
Integrated E/S Lens in Electron Gun, and Magnetic Condenser Lens
Objective lens
One electromagnetic low aberration final probe forming lens
Stigmator T
wo Octupole Stigmators, to correct both lens and source astigmatism
Beam blanker
Electrostatic blanking plates conjugate to writing plane Bandwidth up to 30 MHz. (tr/tf < 6 ns)
Dynamic focus
Iron free coil, ±100 μm range
Beam current drift
< ±0.5% / hr with activated beam current feedback system
Beam apertures
4 selectable by aperture changer mechanism
Maximal travel 100 mm
Drive unit Brush less 3-phase linear motor
Bearing Cross roller bearing
Straightness < 5 μm / 50 mm
Measuring system Integrated laser scale, resolution < 1nm
Position repeatability < ± 6.4 nm
Dynamic position error < ± 3.8 nm
Speed range high resolution 2.5 - 250 μm/s
Speed range low resolution Up to 5 mm/s
Rotation Spindle
Axial rotational error < 0.05 μm
Radial rotational error < 0.05 μm
Radial async. rotation error < 0.015 μm ptp
Rotation speed 1-3000 rpm
主要特點General:
Feedback and closed-loop systems guarantees long time exposure stability.
Fast exposure, High beam current from 1 nA to 30 nA,
CLV or CAV exposure method,
Overlay exposure accuracy and DOSE-control,
Mechanics：
Linear motor and stage outside of vacuum chamber
No magnetic/electrostatic or acoustics interference
Brush less sub systems ensure repeatability
Rotation stage on air bearing
Radial async. rotation error less than 15 nm ptp
滬公網安備31011502016460號
